Title :
28.28% of GaInP2/InGaAs/Ge triple-junction tandem cells
Author :
Tu, J.L. ; Zhang, Z.W. ; Wang, L.X. ; Chi, W.Y. ; Chen, M.B. ; Xiang, X.B. ; Liao, X.B.
Author_Institution :
Shanghai Inst. of Space Power Sources, China
Abstract :
This paper reports our recent results of GaInP2/InGaAs/Ge triple-junction tandem solar cells produced by low-pressure (200 mbar) metal-organic vapor phase epitaxy (MOVPE). Our work focuses on the following improvements: (1) Developing the shallow p/n junction (less than 0.2 μm) with high doping level (∼1×1019cm-3) of Ge bottom cells and selecting GaInP2 to be window layer. (2) Applying InxGa1-xAs material as p/n junction of middle cells. (3) Adopting n+-n-/p--p+ configuration in GaInP2 top cells. (4) Composing with wide band gap materials AlGaAs/GaAs or AIGaAs/GaInP2 as the tunnel junctions. These modification can outstandingly advance our performance of produced GaInP2/InGaAs/Ge triple-junction tandem solar cells, which have reached 28.28% (AM0, 25°C, 2×2 cm2).
Keywords :
III-V semiconductors; MOCVD; doping profiles; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n junctions; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; solar cells; tunnelling; vapour phase epitaxial growth; wide band gap semiconductors; 200 mbar; 25 degC; 28.28 percent; GaInP2-InGaAs-Ge; GaInP2/InGaAs/Ge triple-junction tandem cells; Ge bottom cells; MOVPE; doping level; low-pressure (200 mbar) metal-organic vapor phase epitaxy; middle cell; p/n junction; tunnel junctions; wide band gap materials; window layer; Crystalline materials; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Photovoltaic cells; Radiative recombination; Voltage; X-ray diffraction;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488238
