DocumentCode :
1560799
Title :
Rear-line-contacted silicon concentrator cells on highly and lightly doped substrates
Author :
Mohr, A. ; Roth, T. ; Hermle, M. ; Glunz, S.W.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany
fYear :
2005
Firstpage :
758
Lastpage :
761
Abstract :
A solar concentrator system with one-axis tracking was developed at ISE Freiburg enabling a high geometrical concentration of around 300×. This system uses a parabolic trough mirror and a three-dimensional second stage consisting of compound parabolic concentrators (CPCs). For this concentrator system and particularly for an easy cell integration we are developing rear-line-contacted concentrator cells (RLCC cells). The RLCC cells have a small active size area of 4.5 mm × 4.5 mm matching with the exit area of the CPCs. In order to optimise the cell efficiency, RLCC cells fabricated on lightly or highly doped substrates are investigated. All cells have a 3 μm high Ti/Pd/Ag metallisation on the rear side. This paper shows that RLCC cells on lightly doped substrates peak at higher concentration than the RLCC cell fabricated on highly doped substrates. Nevertheless, both cell types reach nearly the same maximum efficiency.
Keywords :
elemental semiconductors; metallisation; mirrors; semiconductor doping; silicon; solar cells; solar energy concentrators; substrates; 3 mum; 4.5 mm; Si-Ti-Pd-Ag; Ti-Pd-Ag; cell efficiency; compound parabolic concentrators; doped substrates; geometrical concentration; metallisation; one-axis tracking; parabolic trough mirror; rear-line-contacted silicon concentrator cells; solar concentrator system; Absorption; Boron; Dielectrics; Fingers; Mirrors; Optical reflection; Process design; Silicon; Solar energy; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488243
Filename :
1488243
Link To Document :
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