Title :
InGaP/InGaAs/Ge high concentration solar cell development at Emcore
Author :
Stan, M.A. ; Aiken, D.J. ; Sharps, P.R. ; Hills, J. ; Doman, J.
Author_Institution :
Emcore Photovoltaics, Albuquerque, NM, USA
Abstract :
Results from the Emcore triple junction (3J) terrestrial concentrator cell development program are presented. The cell is intended for use at concentrations equal to or exceeding 500× geometrical. Leveraging our 3J space cell we have redesigned the emitter/grid structure, the tunnel diode interconnects, and top cell base thickness for use under concentrated terrestrial illumination. We have achieved a conversion efficiency of 32.8% (low AOD spectrum) at 165×. Methods for achieving still higher efficiencies are discussed, including the development of a metamorphic 3J cell. We have grown and characterized InGaAs metamorphic materials on Ge to be used as virtual substrates in a metamorphic 3J cell. The metamorphic InGaAs material has photoluminescence decay times characteristic of nearly radiatively limited material.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; interconnections; photoluminescence; semiconductor heterojunctions; semiconductor thin films; solar cells; substrates; tunnel diodes; 32.8 percent; AOD spectrum; Emcore triple junction terrestrial concentrator cell development program; InGaAs metamorphic materials; InGaP-InGaAs-Ge; InGaP/InGaAs/Ge high concentration solar cell; concentrated terrestrial illumination; conversion efficiency; emitter/grid structure; metamorphic 3J cell; nearly radiatively limited material; photoluminescence decay time; space cell; top cell base thickness; tunnel diode interconnects; virtual substrates; Costs; Current density; Indium gallium arsenide; Lighting; Optical receivers; Performance evaluation; Photovoltaic cells; Semiconductor diodes; Space technology; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488246
