Title :
High-frequency measurements of the mismatch on the Y-parameters of high-speed SiGe:C HBTs
Author :
Choi, L.J. ; Venegas, R. ; Decoutere, S.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The performance of analog circuits operating at high frequencies is limited by device mismatch at these frequencies. In this paper, high-frequency measurements of the mismatch on the Y-parameters of bipolar transistors are discussed. After investigation of the impact of the deembedding structures and measurement accuracy, the RF matching behavior of 200 GHz SiGe:C HBTs is characterized over a wide range of frequencies and biasing conditions. The mismatch on the cut-off frequency and small-signal parameters are extracted.
Keywords :
Ge-Si alloys; carbon; heterojunction bipolar transistors; microwave transistors; semiconductor device measurement; 200 GHz; RF matching behavior; SiGe:C; Y-parameter mismatch; analog circuits; cut-off frequency mismatch; deembedding structures; device mismatch; heterojunction bipolar transistors; high-frequency measurements; high-speed SiGe:C HBT; small-signal parameter mismatch; Bonding; Circuits; Cutoff frequency; Frequency measurement; Heterojunction bipolar transistors; Mutual coupling; Probes; Radio frequency; Scattering parameters; Testing;
Conference_Titel :
Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on
Print_ISBN :
1-4244-0167-4
DOI :
10.1109/ICMTS.2006.1614296
