Title :
Dielectric relaxation characterization and modeling in large frequency and temperature domain: application to 5fF/μm2 Ta2O5 MIM capacitor
Author :
Manceau, J.-P. ; Bruyère, S. ; Picollet, E. ; Minondo, M. ; Grundrich, C. ; Cottin, D. ; Bely, M.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper deals with 5fF/μm2 Ta2O5 MIM (metal-insulator-metal) dielectric relaxation characterization and modeling. The Dow model based on RC poles is reviewed in particular to introduce temperature behavior. An optimized test chip that can be accurately simulated allows us to properly measure memory effect. This enables to obtained dielectric relaxation model over 5 time decades and the whole temperature and voltage operation range. The good agreement of this model with MIM capacitance versus frequency measurements validates this approach.
Keywords :
MIM devices; capacitors; dielectric relaxation; frequency measurement; semiconductor device models; tantalum compounds; Dow model; RC poles; Ta2O5; dielectric relaxation characterization; dielectric relaxation modeling; frequency measurements; large frequency domain; memory effect measurement; metal-insulator-metal capacitors; temperature behavior; temperature domain; Capacitance; Dielectric measurements; Dielectrics and electrical insulation; Frequency domain analysis; High-K gate dielectrics; MIM capacitors; Metal-insulator structures; Permittivity; Temperature; Testing;
Conference_Titel :
Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on
Print_ISBN :
1-4244-0167-4
DOI :
10.1109/ICMTS.2006.1614303
