Impact of neighbor components heating on power transistor electrical behavior

Both reduction in device sizes and enhanced increase in current densities lead to concern about the impact of self-heating effect on device electrical characteristics. Moreover in power transistors applications, devices are connected in parallel, which follows to also consider thermal interaction between devices. In this study a dedicated structure is designed in order to investigate both thermal phenomena and their effect on electrical measurements. Measurements validate a SPICE model associated to the HICUM level 2 version 2 compact model taking into account temperature variation due to self-heating and thermal coupling.