Novel test structures for on-chip characterization of coupling capacitance variation by in- and anti-phase crosstalk in multi-level metallization

Novel test structure is proposed for on-chip evaluation of the crosstalk-induced variation of coupling capacitance in multi-fanout and global interconnect lines. Then, it is experimentally shown that the crosstalk-induced variation of coupling capacitance, ΔC_C can be larger than the static coupling capacitance, C_C for both multi-fanout and global interconnect using the novel on-chip test structures. HSPICE simulation is performed to confirm the experimental data.