DocumentCode
1560916
Title
SJ and TJ GaAs concentrator solar cells on Si virtual wafers
Author
Gabetta, G. ; Flores, C. ; Campesato, R. ; Casale, C. ; Timò, G. ; Smekens, G. ; Vanbegin, J. ; von Kanel, H. ; Isella, G.
Author_Institution
CESI SpA, Milan, Italy
fYear
2005
Firstpage
850
Lastpage
853
Abstract
GaAs solar cells grown on Si wafers have been investigated for many years to find a way to reduce the solar cell cost, by replacing the expensive Ge substrates with a low cost material and less heavy. Both space and terrestrial applications are interested in the development of this type of technology. This paper is presenting the most recent results on this subject. The preparation of so called Si:Ge "virtual wafers" was carried out with a new approach for Ge deposition on Si wafers, originally developed for microelectronic. Both single junction and triple junction GaAs solar cells were manufactured and preliminary tested. Solar cells ranging from a size of 8 cm2 down to 1 mm2 were manufactured for terrestrial applications in concentrator systems.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; semiconductor junctions; solar cells; surface morphology; GaAs; Si-Ge; microelectronics; single junction concentrator solar cells; terrestrial applications; triple junction concentrator solar cells; virtual wafers; Gallium arsenide; Manufacturing; Ohmic contacts; Photovoltaic cells; Production; Statistics; Sun; Surface cracks; Surface morphology; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488266
Filename
1488266
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