• DocumentCode
    1560916
  • Title

    SJ and TJ GaAs concentrator solar cells on Si virtual wafers

  • Author

    Gabetta, G. ; Flores, C. ; Campesato, R. ; Casale, C. ; Timò, G. ; Smekens, G. ; Vanbegin, J. ; von Kanel, H. ; Isella, G.

  • Author_Institution
    CESI SpA, Milan, Italy
  • fYear
    2005
  • Firstpage
    850
  • Lastpage
    853
  • Abstract
    GaAs solar cells grown on Si wafers have been investigated for many years to find a way to reduce the solar cell cost, by replacing the expensive Ge substrates with a low cost material and less heavy. Both space and terrestrial applications are interested in the development of this type of technology. This paper is presenting the most recent results on this subject. The preparation of so called Si:Ge "virtual wafers" was carried out with a new approach for Ge deposition on Si wafers, originally developed for microelectronic. Both single junction and triple junction GaAs solar cells were manufactured and preliminary tested. Solar cells ranging from a size of 8 cm2 down to 1 mm2 were manufactured for terrestrial applications in concentrator systems.
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; semiconductor junctions; solar cells; surface morphology; GaAs; Si-Ge; microelectronics; single junction concentrator solar cells; terrestrial applications; triple junction concentrator solar cells; virtual wafers; Gallium arsenide; Manufacturing; Ohmic contacts; Photovoltaic cells; Production; Statistics; Sun; Surface cracks; Surface morphology; System testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488266
  • Filename
    1488266