• DocumentCode
    1560999
  • Title

    Catalyst-SnO/sub x/ MIS structure for detection of O/sub 2/, H/sub 2/ and CO

  • Author

    Kang, W.P. ; Kim, C.K.

  • Author_Institution
    Electr. Eng., Vanderbilt Univ., Nashville, TN, USA
  • fYear
    1991
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    Catalyst-SnO/sub x/ MIS capacitors with palladium, platinum, or silver as catalyst and highly resistive SnO/sub x/ as the gas-adsorptive oxide have been explored for the detection of O/sub 2/, H/sub 2/, and CO gases. Device detection is based on the change in ionic charge density and/or charge redistribution in the adsorptive oxide, SnO/sub x/, of the MIS structure upon gas adsorption. The catalyst layer with a thickness of several angstroms deposited on top of SnO/sub x/ is used to enhance the gas selectivity and detectability of the device at a lower temperature range. The mechanism of oxygen detection is attributed to the dissociation of oxygen molecules on the metal catalyst and subsequent chemisorption at extrinsic surface states in SnO/sub x/ as negatively charged ions. This leads to a shift in the flatband voltage of the device to a positive gate voltage. The detection of hydrogen and carbon monoxide is through a reaction with the extrinsic states associated with the chemisorbed oxygen ions.<>
  • Keywords
    carbon compounds; catalysts; chemisorption; electric sensing devices; gas sensors; hydrogen; metal-insulator-semiconductor structures; molecular dissociation; oxygen; palladium; platinum; silver; surface chemistry; tin compounds; Ag; Ag-SnO/sub x/-Si/sub 3/N/sub 4/-SiO/sub 2/-Si-Al; CO; H/sub 2/; MIS capacitors; O/sub 2/; Pd; Pd-SnO/sub x/-Si/sub 3/N/sub 4/-SiO/sub 2/-Si-Al; Pt; Pt-SnO/sub x/-Si/sub 3/N/sub 4/-SiO/sub 2/-Si-Al; SnO/sub x/; activation energy; chemical reaction; chemisorption; detectability; extrinsic surface states; gas selectivity; ionic charge density; metal catalyst; molecular dissociation; negatively charged ions; positive gate voltage; Gas detectors; Hydrogen; Oxygen; Temperature distribution; Temperature sensors; Tin; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-87942-585-7
  • Type

    conf

  • DOI
    10.1109/SENSOR.1991.148828
  • Filename
    148828