DocumentCode :
1560999
Title :
Catalyst-SnO/sub x/ MIS structure for detection of O/sub 2/, H/sub 2/ and CO
Author :
Kang, W.P. ; Kim, C.K.
Author_Institution :
Electr. Eng., Vanderbilt Univ., Nashville, TN, USA
fYear :
1991
Firstpage :
161
Lastpage :
164
Abstract :
Catalyst-SnO/sub x/ MIS capacitors with palladium, platinum, or silver as catalyst and highly resistive SnO/sub x/ as the gas-adsorptive oxide have been explored for the detection of O/sub 2/, H/sub 2/, and CO gases. Device detection is based on the change in ionic charge density and/or charge redistribution in the adsorptive oxide, SnO/sub x/, of the MIS structure upon gas adsorption. The catalyst layer with a thickness of several angstroms deposited on top of SnO/sub x/ is used to enhance the gas selectivity and detectability of the device at a lower temperature range. The mechanism of oxygen detection is attributed to the dissociation of oxygen molecules on the metal catalyst and subsequent chemisorption at extrinsic surface states in SnO/sub x/ as negatively charged ions. This leads to a shift in the flatband voltage of the device to a positive gate voltage. The detection of hydrogen and carbon monoxide is through a reaction with the extrinsic states associated with the chemisorbed oxygen ions.<>
Keywords :
carbon compounds; catalysts; chemisorption; electric sensing devices; gas sensors; hydrogen; metal-insulator-semiconductor structures; molecular dissociation; oxygen; palladium; platinum; silver; surface chemistry; tin compounds; Ag; Ag-SnO/sub x/-Si/sub 3/N/sub 4/-SiO/sub 2/-Si-Al; CO; H/sub 2/; MIS capacitors; O/sub 2/; Pd; Pd-SnO/sub x/-Si/sub 3/N/sub 4/-SiO/sub 2/-Si-Al; Pt; Pt-SnO/sub x/-Si/sub 3/N/sub 4/-SiO/sub 2/-Si-Al; SnO/sub x/; activation energy; chemical reaction; chemisorption; detectability; extrinsic surface states; gas selectivity; ionic charge density; metal catalyst; molecular dissociation; negatively charged ions; positive gate voltage; Gas detectors; Hydrogen; Oxygen; Temperature distribution; Temperature sensors; Tin; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
Type :
conf
DOI :
10.1109/SENSOR.1991.148828
Filename :
148828
Link To Document :
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