Title :
17.7% efficiency large area multicrystalline silicon solar cell using screen-printed metallization technique
Author :
Fukui, K. ; Goto, S. ; Atobe, J. ; Hashigami, H. ; Sakai, Y. ; Tsuchida, M. ; Inomata, Y. ; Fujii, S. ; Shirasawa, K.
Author_Institution :
Kyocera Corp., Shiga, Japan
Abstract :
This paper describes the development of an industrial processing sequence that employs the screen printing and firing for large area multicrystalline silicon (mc-Si) solar cells. A record high efficiency mc-Si solar cell of 17.7%; cell area: 232.5 cm2 has been achieved using Kyocera´s original cast mc-Si material. The diffusion length of mc-Si material was improved after cell processing especially at the region that had low diffusion length by gettering or passivation effects. The diffusion length after cell processing was about 270 μm, and this value corresponds to the value estimated internal quantum efficiency curve of PC-1D simulation very well. The photovoltaic module has been fabricated using 48 cells that have average efficiency of 17.2% with this type of cell. The record module efficiency of 15.7% has been achieved.
Keywords :
diffusion; elemental semiconductors; getters; passivation; semiconductor device metallisation; silicon; solar cells; 15.7 percent; 17.7 percent; Si; diffusion length; firing; gettering; internal quantum efficiency; module efficiency; multicrystalline silicon solar cell; passivation; photovoltaic module; screen-printed metallization technique; Costs; Etching; Impurities; Metallization; Passivation; Photovoltaic cells; Photovoltaic systems; Printing; Silicon; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488296