DocumentCode
1561219
Title
Synchrotron-based investigations into metallic impurity distribution and defect engineering in multicrystalline silicon via thermal treatments
Author
Buonassisi, Tonio ; Istratov, Andrei A. ; Marcus, Matthew A. ; Peters, Stefan ; Ballif, Christophe ; Heuer, Matthias ; Ciszek, Ted F. ; Cai, Zhonghou ; Lai, Bany ; Schindler, Roland ; Weber, Eicke R.
Author_Institution
Lawrence Berkeley Nat. Lab., CA, USA
fYear
2005
Firstpage
1027
Lastpage
1030
Abstract
Synchrotron-based microprobe investigations were conducted to study the effect of heat treatments and cooling rates on the distribution and chemical state of metal-rich precipitates in multicrystalline silicon. A brief summary of these results is presented herein; complete reports will be published elsewhere. The effect of temperature on the dissolution of metal-silicide precipitates during rapid thermal processing has been investigated, revealing that higher temperatures can lead to the dissolution of metal silicide precipitates correlated with decreases in cell performance. The effect of modifying cooling rates on the distributions of metals has also been investigated, indicating that while fast cools lead to widespread nucleation, slow cools can lead to the formation of significantly larger clusters and decreased intragranular recombination activity.
Keywords
cooling; dissolving; elemental semiconductors; impurities; rapid thermal processing; silicon; solar cells; cooling rates; defect engineering; intragranular recombination activity; metal-rich precipitates; metal-silicide precipitates; metallic impurity distribution; multicrystalline silicon; nucleation; rapid thermal processing; synchrotron-based microprobe investigations; thermal treatments; Annealing; Chemical analysis; Cooling; Impurities; Laboratories; Light sources; Materials science and technology; Silicon; Temperature distribution; Thermal engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488308
Filename
1488308
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