• DocumentCode
    1561219
  • Title

    Synchrotron-based investigations into metallic impurity distribution and defect engineering in multicrystalline silicon via thermal treatments

  • Author

    Buonassisi, Tonio ; Istratov, Andrei A. ; Marcus, Matthew A. ; Peters, Stefan ; Ballif, Christophe ; Heuer, Matthias ; Ciszek, Ted F. ; Cai, Zhonghou ; Lai, Bany ; Schindler, Roland ; Weber, Eicke R.

  • Author_Institution
    Lawrence Berkeley Nat. Lab., CA, USA
  • fYear
    2005
  • Firstpage
    1027
  • Lastpage
    1030
  • Abstract
    Synchrotron-based microprobe investigations were conducted to study the effect of heat treatments and cooling rates on the distribution and chemical state of metal-rich precipitates in multicrystalline silicon. A brief summary of these results is presented herein; complete reports will be published elsewhere. The effect of temperature on the dissolution of metal-silicide precipitates during rapid thermal processing has been investigated, revealing that higher temperatures can lead to the dissolution of metal silicide precipitates correlated with decreases in cell performance. The effect of modifying cooling rates on the distributions of metals has also been investigated, indicating that while fast cools lead to widespread nucleation, slow cools can lead to the formation of significantly larger clusters and decreased intragranular recombination activity.
  • Keywords
    cooling; dissolving; elemental semiconductors; impurities; rapid thermal processing; silicon; solar cells; cooling rates; defect engineering; intragranular recombination activity; metal-rich precipitates; metal-silicide precipitates; metallic impurity distribution; multicrystalline silicon; nucleation; rapid thermal processing; synchrotron-based microprobe investigations; thermal treatments; Annealing; Chemical analysis; Cooling; Impurities; Laboratories; Light sources; Materials science and technology; Silicon; Temperature distribution; Thermal engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488308
  • Filename
    1488308