Correspondence between sheet resistance and emitter profile of phosphorus diffused emitters from a spray-on dopant

Author

Bentzen, Andreas ; Holt, Awe

Author_Institution

Sect. for Renewable Energy, Inst.for Energiteknikk, Kjeller, Norway

fYear

2005

Firstpage

1153

Lastpage

1156

Abstract

The evolution of the emitter sheet resistance upon phosphorus in-diffusion from a spray-on dopant has been studied in the temperature range 840-990 °C. In complement with investigations of emitter diffusion profiles, by both electrochemical capacitance-voltage profiling and secondary ion mass spectrometry, we find that the sheet resistance is determined directly by the depth of the flat plateau near the surface in profiles of electrically active phosphorus. Thus, with respect to sheet resistance, an emitter can be regarded as a constant concentration abrupt box layer, with thickness and concentration specified by the flat plateau, irrespective of the actual profile at lower concentrations. Therefore, independent optimization of the emitter profile at lower concentrations is enabled.

Keywords

boron; diffusion; electrical resistivity; elemental semiconductors; phosphorus; secondary ion mass spectra; semiconductor doping; silicon; solar cells; 840 to 990 degC; Si:PB; constant concentration abrupt box layer; electrochemical capacitance-voltage profiling; emitter profile; phosphorus diffused emitters; secondary ion mass spectrometry; sheet resistance; spray-on dopant; Belts; Chemicals; Electric resistance; Etching; Furnaces; Mass spectroscopy; Photovoltaic cells; Spraying; Surface resistance; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488342

Filename

1488342