DocumentCode :
1561569
Title :
Wetting properties of silicon surfaces
Author :
Hermansson, K. ; Lindberg, U. ; Hok, B. ; Palmskog, G.
Author_Institution :
Dept. of Electron., Uppsala Univ., Sweden
fYear :
1991
Firstpage :
193
Lastpage :
196
Abstract :
The wetting properties of silicon surfaces are believed to be important for the process of silicon-silicon direct bonding, and for the broader issue of biocompatibility. The authors have investigated 14 different surface treatments, including several etching and surface modifying agents, and the contact angles to water were measured for each surface treatment. It was shown that the contact angle could be controlled almost continuously between 5 degrees and 96 degrees by varying the surface treatment. Removing the native oxide layer in hydrofluoric acid results in a hydrophobic surface, whereas hydrophilic surfaces are obtained by inserting the wafer in, e.g. boiling NH/sub 3/:H/sub 2/O/sub 2/:H/sub 2/O. Protein compatibility was investigated by measuring the degree of interaction with insulin. The hydrophobic surfaces showed a relatively strong interaction, whereas hydrophilic surfaces are almost completely inert towards insulin.<>
Keywords :
biological techniques and instruments; contact angle; etching; proteins; semiconductor technology; silicon; surface treatment; wetting; HF; NH/sub 3/-H/sub 2/O/sub 2/-H/sub 2/O; Si; biocompatibility; contact angles; direct bonding; etching; hydrophilic surfaces; hydrophobic surfaces; insulin; oxide layer; protein compatibility; surface treatments; wetting; Bonding; Cleaning; Etching; Goniometers; Hafnium; Insulin; Proteins; Silicon; Surface treatment; Telecommunications;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
Type :
conf
DOI :
10.1109/SENSOR.1991.148835
Filename :
148835
Link To Document :
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