DocumentCode :
1561593
Title :
Manifold use of growth substrate in the porous silicon-layer transfer-process
Author :
Horbelt, Renate ; Terheiden, Barbara ; Auer, Richard ; Brendel, Rolf
Author_Institution :
Institut fur Solarenergieforschung Hameln, Emmerthal, Germany
fYear :
2005
Firstpage :
1193
Lastpage :
1196
Abstract :
The number of process cycles that the same monocrystalline Si growth substrate wafer can be used is an important issue when applying layer transfer processes to photovoltaics. Together with the thickness of the epitaxial layer this number controls the Si consumption. The nine-fold application of the porous silicon (PSI) process to the same 4" silicon wafer is demonstrated. The electronic quality of the epitaxial layer is maintained. During this nine-fold use the average consumption of Si from the substrate wafer is 46 μm per cycle. With an improved processing sequence the Si consumption per cycle is reduced to only 12 μm.
Keywords :
elemental semiconductors; porous semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; Si; epitaxial layer; growth substrate; layer transfer-process; photovoltaics; porous silicon; silicon wafer; Chemical vapor deposition; Crystallization; Epitaxial growth; Epitaxial layers; Etching; Glass; Inductors; Photovoltaic cells; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488352
Filename :
1488352
Link To Document :
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