Title :
N-type multicrystalline silicon solar cells with BBr3-diffused front junction
Author :
Libal, J. ; Petres, R. ; Kopecek, R. ; Hahn, G. ; Wambach, K. ; Fath, P.
Author_Institution :
Fac. of Sci., Konstanz Univ., Germany
Abstract :
A simplified laboratory process with one photolithographic step for front junction solar cells on n-type multicrystalline (mc) silicon has been developed. The emitter diffusion is done in an open tube furnace with BBr3 and back-surface-field diffusion using POCl3, loading the wafers front-to-front and back-to-back respectively and thus avoiding additional etching steps. The front surface has been passivated by a 10 nm thermal oxide grown in a tube furnace. With this simple process, efficiencies of 11.0% on n-type mc-Si and 11.5% on n-type Cz-Si have been realized without antireflection coating and without surface texture. Applying a double layer antireflection coating (DARC) on these cells, efficiencies of 16.4% on Cz-Si and 14.7% on mc-Si have been achieved.
Keywords :
antireflection coatings; diffusion; elemental semiconductors; etching; passivation; photolithography; silicon; solar cells; 11.0 percent; 11.5 percent; 14.7 percent; 16.4 percent; Si:B; back-surface-field diffusion; diffused front junction; double layer antireflection coating; emitter diffusion; etching; n-type multicrystalline silicon solar cells; open tube furnace; passivation; photolithographic step; surface texture; thermal oxide; Charge carrier lifetime; Coatings; Laboratories; Lithography; Oxidation; Passivation; Photovoltaic cells; Radiative recombination; Silicon; Surface treatment;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488356
