DocumentCode :
1561737
Title :
Controlling the silicon nitride film density for ultrahigh-rate deposition of top quality antireflection coatings
Author :
Kessels, W.M.M. ; Van Den Oeve, P.J. ; Hoex, B. ; Bosch, R.C.M. ; van Erven, A.J.M. ; Bijker, M.D. ; van de Sanden, M.C.M.
Author_Institution :
Dept. of Appl. Phys., Eindhoven Univ. of Technol., Netherlands
fYear :
2005
Firstpage :
1253
Lastpage :
1256
Abstract :
In this contribution we address the importance of a high mass density for silicon nitride films used as an antireflection coating on crystalline silicon solar cells. Two approaches for finding the optimized deposition conditions are presented. The outcome of these optimization studies clearly show that both the bulk and surface passivation benefit from a high mass density and that top quality antireflection coatings can be obtained at deposition rates up to 5 nm/s.
Keywords :
antireflection coatings; carrier lifetime; elemental semiconductors; optical films; passivation; silicon; silicon compounds; solar cells; surface roughness; Si; SiNx; antireflection coatings; crystalline silicon solar cells; mass density; silicon nitride film density; surface passivation; ultrahigh-rate deposition; Coatings; Crystallization; Hydrogen; Optical films; Passivation; Photovoltaic cells; Plasma measurements; Production; Semiconductor films; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488367
Filename :
1488367
Link To Document :
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