Title :
Controlling the silicon nitride film density for ultrahigh-rate deposition of top quality antireflection coatings
Author :
Kessels, W.M.M. ; Van Den Oeve, P.J. ; Hoex, B. ; Bosch, R.C.M. ; van Erven, A.J.M. ; Bijker, M.D. ; van de Sanden, M.C.M.
Author_Institution :
Dept. of Appl. Phys., Eindhoven Univ. of Technol., Netherlands
Abstract :
In this contribution we address the importance of a high mass density for silicon nitride films used as an antireflection coating on crystalline silicon solar cells. Two approaches for finding the optimized deposition conditions are presented. The outcome of these optimization studies clearly show that both the bulk and surface passivation benefit from a high mass density and that top quality antireflection coatings can be obtained at deposition rates up to 5 nm/s.
Keywords :
antireflection coatings; carrier lifetime; elemental semiconductors; optical films; passivation; silicon; silicon compounds; solar cells; surface roughness; Si; SiNx; antireflection coatings; crystalline silicon solar cells; mass density; silicon nitride film density; surface passivation; ultrahigh-rate deposition; Coatings; Crystallization; Hydrogen; Optical films; Passivation; Photovoltaic cells; Plasma measurements; Production; Semiconductor films; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488367