Title :
Surface texturing of silicon by hydrogen radicals
Author :
Nagayoshi, Hiroshi ; Konno, Keita ; Nishimura, Suzuka ; Terashima, Kazutaka
Author_Institution :
Tokyo Nat. Coll. of Technol., Japan
Abstract :
This paper presents a new texturing method for crystalline Si surface using hydrogen radicals generated by tungsten hot filament. The surface of after hydrogen radical treatment showed wide variation of surface morphology, depending on etching conditions. Feature size of the texture structure much depended on the reaction pressure. Inverted pyramid texture structure was obtained at 800 °C, 0.1 Torr. Reflectance spectra of textured Si without AR coatings showed very low surface reflectance of less than 3% in the range of 900 nm to 200 nm.
Keywords :
elemental semiconductors; etching; hydrogen; reflectivity; silicon; surface morphology; surface texture; 0.1 torr; 800 degC; 900 to 200 nm; AR coatings; H; Si; crystalline surface; etching conditions; hydrogen radicals; silicon; surface morphology; surface reflectance; surface texturing; tungsten hot filament; Coatings; Crystallization; Etching; Hydrogen; Reflectivity; Silicon; Surface morphology; Surface texture; Surface treatment; Tungsten;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488369
