Title :
Plasma properties of a novel commercial plasma source for high-throughput processing of c-Si solar cells
Author :
van den Oever, P.J. ; Kessels, W.M.M. ; Hoex, B. ; Bosch, R.C.M. ; van Erven, A.J.M. ; Pennings, R.L.J.R. ; Stals, W.T.M. ; Bijker, M.D. ; van de Sanden, M.C.M.
Author_Institution :
Dept. of Appl. Phys., Eindhoven Univ. of Technol., Netherlands
Abstract :
A novel commercial plasma source for high-throughput processing of crystalline silicon solar cells is presented. In this paper, the plasma properties of this so-called expanding thermal plasma (ETP) technique are addressed in detail and its application in an inline PECVD tool for ultrahigh-rate deposition of silicon nitride for antireflection coating purposes is described.
Keywords :
antireflection coatings; elemental semiconductors; plasma CVD; silicon; silicon compounds; solar cells; PECVD; Si; SiN; antireflection coating; commercial plasma source; expanding thermal plasma technique; plasma properties; silicon nitride; silicon solar cells; Coatings; Inductors; Photovoltaic cells; Plasma applications; Plasma materials processing; Plasma properties; Plasma sources; Plasma temperature; Production; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488384
