Title :
High efficiency triple-junction solar cells with hydrogenated nanocrystalline silicon bottom cell
Author :
Yan, Baojie ; Owens, Jessica M. ; Yang, Jeffrey ; Guha, Subhendu
Author_Institution :
United Solar Ovonic Corp., Troy, MI, USA
Abstract :
We report on an a-Si:H/a-SiGe:H/nc-Si:H triple-junction nip solar cell deposited on Ag/ZnO back reflector coated stainless steel substrate. The initial and stable active-area efficiencies of 14.6% and 12.6%, respectively, have been achieved by optimizing the nc-Si:H bottom cell using a hydrogen dilution profiling technique for controlling the evolution of nanocrystalline structure, improving the back reflector for light trapping, and optimizing the device design.
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; hydrogen; nanostructured materials; radiation pressure; semiconductor junctions; silicon; solar cells; 12.6 percent; 14.6 percent; Ag-ZnO; Si:H-SiGe:H-Si:H; back reflector coated stainless steel substrate; hydrogen dilution profiling technique; hydrogenated nanocrystalline silicon bottom cell; light trapping; triple-junction solar cells; Crystallization; Design optimization; Grain size; Hydrogen; Optical films; Photonic band gap; Photovoltaic cells; Silicon; Steel; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488416
