Title :
Modeling of triple junction a-Si solar cells using ASA: analysis of device performance under various failure scenarios
Author :
Das, Chandan ; Du, Wenhui ; Deng, Xunming
Author_Institution :
Dept. of Phys. & Astron., Toledo Univ., OH, USA
Abstract :
Triple junction a-Si solar cells have been modeled and simulated using the Advanced Semiconductor Analysis (ASA). The device performance is analyzed with numerically simulated I-V characteristics. We have studied several failure scenarios such as variations in the thickness of different layers of the multilayered triple-junction structure. Distinctive features of the I-V characteristics and solar parameters have been found which have been correlated with experimentally obtained results.
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; failure analysis; semiconductor device models; semiconductor junctions; silicon; solar cells; Advanced Semiconductor Analysis; I-V characteristics; Si-SiGe-SiGe; device performance; failure scenarios; multilayered triple-junction structure; triple junction solar cells; Analytical models; Fabrication; Failure analysis; Manufacturing; Numerical simulation; Performance analysis; Photovoltaic cells; Poisson equations; Production; Semiconductor thin films;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488422
