Title :
Development of a CMOS low-noise analog front-end ASIC for X-ray imaging applications
Author :
Zervakis, E. ; Loukas, D. ; Haralabidis, N. ; Pavlidis, A.
Author_Institution :
Microelectron. Circuit Design Group, Nat. Tech. Univ. of Athens, Greece
Abstract :
High density compound materials (CdTe, GaAs, HgI2) are currently evaluated as direct photon conversion sensors for applications in X-ray imaging. A new front-end stage has been designed with the aim to be implemented as readout chain in a luggage inspection system based on a linear array of CdTe sensors. Both types of electron or hole collecting CdTe sensors will be evaluated. Each detecting element is characterized by leakage current smaller than 5nA/mm2 at working point and capacitance in the range of 0.5pF. A low noise front-end chain has been developed based on the voltage mode architecture. The operation of the front-end stage is optimized for a 2pF capacitance, system input capacitance, and for energy range of 20-220keV. A prototype ASIC has been fabricated in a commercial 0.6um CMOS process.
Keywords :
CMOS analogue integrated circuits; CMOS image sensors; II-VI semiconductors; X-ray detection; X-ray imaging; application specific integrated circuits; cadmium compounds; readout electronics; semiconductor counters; 0.6 micron; 2 pF; 20 to 220 keV; CMOS low-noise analog front-end ASIC; CdTe; CdTe direct photon conversion sensor; CdTe sensor; X-ray imaging; capacitance; leakage current; linear array; luggage inspection system; readout electronics; voltage-mode architecture; Application specific integrated circuits; CMOS image sensors; Capacitance; Gallium arsenide; Image sensors; Inspection; Optoelectronic and photonic sensors; Sensor arrays; Sensor phenomena and characterization; X-ray imaging;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1206293
