Experimental Evaluation of SiC PiN Diode Forward Bias Degradation and Long Term Stability

New automated measurement systems and test procedures are presented that enable the evaluation of long-term stability of SiC PiN diodes. Long-term stability results are presented for 10 kV SiC PiN diodes that are made using a new fabrication technology developed to eliminate the source of the degradation. The major objectives of the long-term stability test procedures are to monitor the forward on-state voltage degradation and current area reduction for different forward bias stress levels. Three experimental systems have been used to perform the long-term stability study. Results show that it is possible for SiC diodes to perform acceptably after over 2000 hours of forward bias stress time.