Fabrication and performance of a fully integrated mu -pirani pressure gauge with digital readout

Author

Mastrangelo, C.H. ; Muller, R.S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ. Berkeley, CA, USA

fYear

1991

Firstpage

245

Lastpage

248

Abstract

A thermal absolute pressure sensor of the heated microbridge type has been integrated with an active bias circuit and an 8-bit successive-approximation register (SAR) analog-to-digital (A/D) converter. The chip, which contains about 1000 MOSFETs, measures absolute gas pressure between 10 to 10/sup 4/ Pa, and it is implemented in a 14-mask, 4- mu m NMOS technology merged with the microsensor process. The fabrication process and sensing performance of the mu -pirani gauge are described.<>

Keywords

MOS integrated circuits; analogue-digital conversion; digital readout; electric sensing devices; pressure measurement; pressure transducers; vacuum microelectronics; 10 to 10/sup 4/ Pa; 4 micron; MOSFET containing; NMOS technology; absolute gas pressure; active bias circuit; digital readout; fabrication process; fully integrated mu -pirani pressure gauge; heated microbridge type; performance; successive-approximation register ADC; thermal absolute pressure sensor; vacuum microelectronics; Analog-digital conversion; Fabrication; Integrated circuit measurements; Integrated circuit technology; MOS devices; MOSFETs; Pressure measurement; Registers; Semiconductor device measurement; Thermal sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.148848

Filename

148848