DocumentCode :
156335
Title :
Fractality as a new nanotechnological direction of semiconductor material science
Author :
Torkhov, N.A.
Author_Institution :
Sci. Res. Inst. of Semicond., Tomsk, Russia
fYear :
2014
fDate :
7-13 Sept. 2014
Firstpage :
663
Lastpage :
664
Abstract :
Studies have shown that in the local approximation, the behavior of electrical properties of semiconductor surfaces, interfaces, processes of current flow and charge transport, as well as the majority of technological processes on the nano-level satisfy all properties of chaotic systems. In the local approximation, the dependences of the electrophysical properties of objects and geometry of technological processes on the linear dimensions and fractional values of fractal dimensions allow making control of the properties of semiconductors and technological processes on the nano-level, which is a sign of a new nanotechnology direction in semiconductor material science. Unlike quantum effects, not only the energy properties of electron gas, but also almost all other physical properties of semiconductors obey the fractal regularities in the local approximation.
Keywords :
fractals; nanotechnology; semiconductor industry; semiconductor materials; charge transport; electron gas; fractality; local approximation; nanotechnological direction; semiconductor material science; semiconductor process; semiconductor surface; Fractals; Gallium nitride; HEMTs; TV;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
Type :
conf
DOI :
10.1109/CRMICO.2014.6959576
Filename :
6959576
Link To Document :
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