• DocumentCode
    156336
  • Title

    2D electron gas mobility in pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructures with donor-acceptor doping

  • Author

    Protasov, D.Yu. ; Bakarov, A.K. ; Toropov, A.I. ; Zhuravlev, K.S.

  • Author_Institution
    Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
  • fYear
    2014
  • fDate
    7-13 Sept. 2014
  • Firstpage
    665
  • Lastpage
    666
  • Abstract
    It is shown, that the donor-acceptor doping of pHEMT heterostructures lead to significant suppression of an additive parasitic conductivity channel via δ-doping layer. In such heterostructures the two-dimensional electron gas mobility reached the value of 6000 cm2/(Vxs) at density exceeding 4×1012 cm-2.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; two-dimensional electron gas; δ-doping layer; 2D electron gas mobility; AlGaAs-InGaAs-AlGaAs; additive parasitic conductivity channel; donor-acceptor doping; pHEMT heterostructures; pseudomorphic heterostructures; two-dimensional electron gas mobility; Doping;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-412-5
  • Type

    conf

  • DOI
    10.1109/CRMICO.2014.6959577
  • Filename
    6959577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=156336