• DocumentCode
    156338
  • Title

    Photoluminescence of AlGaAs/InGaAs/GaAs phemt heterostructures with donor-acceptor doping of barriers

  • Author

    Gulyaev, D.V. ; Zhuravlev, K.S. ; Bakarov, A.K. ; Toropov, A.I.

  • Author_Institution
    Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
  • fYear
    2014
  • fDate
    7-13 Sept. 2014
  • Firstpage
    667
  • Lastpage
    668
  • Abstract
    We have studied the photoluminescence (PL) of AlGaAs/InGaAs/GaAs pHEMT heterostructures with donor-acceptor doping of AlGaAs barriers. We have found out that the application of additional p+doped AlGaAs layers leads to the appearance of the new bands in the PL spectra. These bands are identified as the transitions between 1) donor-acceptor pairs in the doped AlGaAs layers and 2) conduction subband - acceptor levels in the undoped InGaAs well.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; photoluminescence; semiconductor doping; AlGaAs-InGaAs-GaAs; barrier structure; donor-acceptor doping; donor-acceptor pairs; pHEMT heterostructure; photoluminescence; Gallium arsenide; PHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-412-5
  • Type

    conf

  • DOI
    10.1109/CRMICO.2014.6959578
  • Filename
    6959578
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=156338