Novel strain sensors based on magnetostrictive GMR/TMR structures

Summary form only given. While there has been considerable research devoted to the use of GMR (giant magnetoresistance) and TMR (tunnel magnetoresistance) layered structures-these studies have focused mainly on data storage applications (e.g., MRAM, Read-write heads) and magnetic field sensors. Comparatively few studies have been devoted to the exploitation of these materials in broader industrial applications for use such as stress, strain or pressure sensors. This study presents an investigation into various magnetic layer structures suitable for devices sensing mechanical responses such as stress, strain and pressure.