DocumentCode
1563674
Title
Determination of the Feedback Capacity of a Low Voltage Trench Gate MOSFET from Dynamic Measurements
Author
Höch, Vera ; Lübbers, Melanie ; Petzoldt, Jürgen ; Heeb, Michael ; Jacobs, Heiner
Author_Institution
Tech. Univ. Ilmenau, Ilmenau
fYear
2007
Firstpage
870
Lastpage
875
Abstract
Information on transistor capacities is not only important for the calculation of switching losses and the driver design but also for estimating the transient and the EMC behavior of converters. However, data sheets supply little information on transient transistor capacities. This is why this paper presents a procedure for their determination from dynamic measurements. The plausibility of the determined characteristic is verified in a behavioral simulation model.
Keywords
MOSFET; circuit feedback; electromagnetic compatibility; switching circuits; EMC behavior; dynamic measurements; feedback capacity; low voltage trench gate MOSFET; switching losses calculation; transistor capacities; Circuit simulation; Design engineering; Feedback; Low voltage; MOSFET circuits; Power engineering and energy; Process design; Switching converters; Switching loss; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location
Orlando, FL
ISSN
0275-9306
Print_ISBN
978-1-4244-0654-8
Electronic_ISBN
0275-9306
Type
conf
DOI
10.1109/PESC.2007.4342103
Filename
4342103
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