• DocumentCode
    1563873
  • Title

    Dynamic Stress Effect on LDMOS RF Performances

  • Author

    Jiang, L. ; Yuan, J.S.

  • Author_Institution
    Semtech Corp., Camarillo
  • fYear
    2007
  • Firstpage
    995
  • Lastpage
    996
  • Abstract
    Dynamic stress effect on LDMOS RF performances have been evaluated. Measured S21 shows less degradation subject to dynamic stress than DC stress. RF power amplifier´s output power and power-added efficiency degrade after dynamic hot electron stress.
  • Keywords
    hot carriers; power MOSFET; power amplifiers; radiofrequency amplifiers; stress effects; LDMOS RF performance; RF power amplifier; dynamic hot electron stress; dynamic stress effect; Circuits; Degradation; Hot carriers; Power amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Stress measurement; Vehicle dynamics; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    0275-9306
  • Print_ISBN
    978-1-4244-0654-8
  • Electronic_ISBN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.2007.4342125
  • Filename
    4342125
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1563873