Novel Integrable 80V Silicon Lateral Trench Power MOSFETs for High Frequency DC-DC Converters

We propose novel integrable 80V silicon lateral trench power MOSFETs with low Figures of Merit (R_on times Q_g and R_on times Q_gd) proving very attractive for high frequency DC- DC converter applications. The performance of these lateral trench power MOSFETs was simulated using a 2-D device simulator, and an analytical model was developed and implemented in MAST HDL. Circuit simulations indicate a 4X reduction in the switching losses over a comparable commercial device, especially at high switching frequencies ( >500kHz).