Electric Characteristics of Planar Interconnect Technologies for Power MOSFETs

Author

Dieckerhoff, Sibylle ; Kirfe, Tino ; Wernicke, Thies ; Kallmayer, Christine ; Ostmann, Andreas ; Jung, Erik ; Wunderle, Bernhard ; Reichl, Herbert

Author_Institution

Tech. Univ. of Berlin, Berlin

fYear

2007

Firstpage

1036

Lastpage

1042

Abstract

In this paper, two planar interconnection technologies for power semiconductors - a Flip Chip solution with a flexible substrate and a Chip-in-Polymer approach - are presented. These technologies substitute the wire bonds which are usually applied to contact the top side pads of power semiconductors. The process flow of the technology developments is explained. Exemplarily, prototypes are built applying fast switching MOSFETs in the voltage class up to 100 V. Based on these prototypes, experimental and simulation results with regard to the thermo-electric characteristics of the prototypes are discussed.

Keywords

chip-on-board packaging; interconnections; power MOSFET; semiconductor device packaging; thermoelectric devices; chip-in-polymer technology; flexible substrate; flip-chip devices; planar interconnect technologies; power MOSFET; power semiconductors; thermo-electric characteristics; Assembly; Electric variables; Electronics cooling; Integrated circuit interconnections; MOSFETs; Packaging; Prototypes; Substrates; Voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2007. PESC 2007. IEEE

Conference_Location

Orlando, FL

ISSN

0275-9306

Print_ISBN

978-1-4244-0654-8

Electronic_ISBN

0275-9306

Type

conf

DOI

10.1109/PESC.2007.4342134

Filename

4342134