DocumentCode
156405
Title
Nanostructural semiconductors based on powder technology
Author
Mazinov, A.S. ; Shevchenko, A.I. ; Voskresensky, V.M. ; Kuropatkin, A.V.
Author_Institution
Taurida Nat. V. I. Vernadskiy Univ., Simferopol, Ukraine
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
740
Lastpage
741
Abstract
The basic methods to obtain nanocrystalline silicon based on powder technology are analysed. Structural features of the powder nanosilicon prepared by plasma chemical synthesis are considered. Test samples are generated by the dynamic pressure and static pressing. Current and temperature characteristics of the test samples, which showed the possibility of using monocrystallites powder material as a part of the active layers of nonlinear devices, are analysed.
Keywords
elemental semiconductors; materials testing; nanoparticles; plasma materials processing; powder technology; powders; silicon; Si; dynamic pressure; monocrystallite powder material; nanocrystalline silicon; nanostructural semiconductor; nonlinear device; plasma chemical synthesis; powder nanosilicon preparation; powder technology; static pressing; Powders;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959611
Filename
6959611
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