In-line Monitor of Non-overlay Misalignment Defect by Dark-Field Inspection System

Author

Huang, Sean ; Henry Chen ; Li, Wensheng ; Huang, He ; Xiang, Yin ; Jiang, Hongbo ; Siqun Xiao

Author_Institution

Semicond. Manuf. Int. Corp., Beijing

fYear

2008

Firstpage

15

Lastpage

18

Abstract

A pattern misalignment defect between DT and AA module caused by none-overlay issue was detected and in-line monitored by the ComPLUS3T dark field wafer inspection system. The misalignment was as small as 5-15 nm and it modulated across the wafer with a periodicity of reticle shot. Signal analysis was performed together with study on other wafer inspection system, and it demonstrated that the dark field wafer inspection system with normal incident illumination was the most effective tool to monitor such defect.

Keywords

inspection; semiconductor device manufacture; ComPLUS3T dark field wafer inspection system; dark-field inspection system; nonoverlay misalignment defect; normal incident illumination; pattern misalignment defect; signal analysis; Condition monitoring; Control systems; Helium; Inspection; Lighting; Metrology; Semiconductor device manufacture; Semiconductor materials; Signal analysis; Testing; ComPLUS Dark field System; Defect Control; Pattern Misalignment and Yield Loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI

Conference_Location

Cambridge, MA

ISSN

1078-8743

Print_ISBN

978-1-4244-1964-7

Electronic_ISBN

1078-8743

Type

conf

DOI

10.1109/ASMC.2008.4528999

Filename

4528999