Title :
In-line Monitor of Non-overlay Misalignment Defect by Dark-Field Inspection System
Author :
Huang, Sean ; Henry Chen ; Li, Wensheng ; Huang, He ; Xiang, Yin ; Jiang, Hongbo ; Siqun Xiao
Author_Institution :
Semicond. Manuf. Int. Corp., Beijing
Abstract :
A pattern misalignment defect between DT and AA module caused by none-overlay issue was detected and in-line monitored by the ComPLUS3T dark field wafer inspection system. The misalignment was as small as 5-15 nm and it modulated across the wafer with a periodicity of reticle shot. Signal analysis was performed together with study on other wafer inspection system, and it demonstrated that the dark field wafer inspection system with normal incident illumination was the most effective tool to monitor such defect.
Keywords :
inspection; semiconductor device manufacture; ComPLUS3T dark field wafer inspection system; dark-field inspection system; nonoverlay misalignment defect; normal incident illumination; pattern misalignment defect; signal analysis; Condition monitoring; Control systems; Helium; Inspection; Lighting; Metrology; Semiconductor device manufacture; Semiconductor materials; Signal analysis; Testing; ComPLUS Dark field System; Defect Control; Pattern Misalignment and Yield Loss;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2008.4528999
