DocumentCode
1564240
Title
In-Line Process Window Monitoring using Voltage Contrast Inspection
Author
Patterson, Oliver D. ; Kang, Hyoung H. ; Wu, Kevin ; Feichtinger, Petra
Author_Institution
IBM, East Fishkill, NY
fYear
2008
Firstpage
19
Lastpage
24
Abstract
This paper describes a methodology to measure process windows in-line at level using voltage contrast inspection and special families of test structures. This methodology allows rapid turn-around of experiments designed to find the most robust and best centered process conditions. Each family of structures should be laid out with a single super-pitch so that a single wafer scan can be used for one or more process windows. Rule based binning based on die X and Y coordinates is then used to separate out the results for each instance of the process window family. Three examples from the contact module are presented to illustrate the methodology. Structures to the monitor contact size, contact to poly space and contact pitch process windows are discussed.
Keywords
electron beam applications; inspection; process monitoring; contact pitch process windows; electron beam inspection; in-line process window monitoring; monitor contact size; voltage contrast inspection; wafer scan; Electronics industry; Feedback; Inspection; Monitoring; Process control; Robustness; Space technology; Testing; Virtual colonoscopy; Voltage; Process window; contacts; e-beam inspection; inspection SEM; voltage contrast;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
978-1-4244-1964-7
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2008.4529000
Filename
4529000
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