Simulation on A Novel Ga-doped Phase Change Memory for Next Generation Embedded Non-Volatile Memory Application

Phase change memory (PCM) becomes very hot in Non volatile memory (NVM) with 65 nm below technologies due to its special storage mode. However, several bottlenecks like power, thermal stability and cycling ability limit the development of PCM. Thus, in this paper, a novel phase change memory based on alloy Ga₃Sb₈Te₁ is designed, then FEA transient thermal, crystalline kinetics analysis and SPICE macro model of embedded PCM based on this material are established. The results of FEA transient thermal simulation and crystalline kinetics analysis show that comparing with conventional GeSbTe-base material the new phase change alloy Ga₃Sb₈Te₁ has lower reset power, higher thermal stability and cycling ability as well as faster set frequency.