DocumentCode :
1564364
Title :
Flex-ALD Lanthanum Materials for High-k/Metal-Gate Applications
Author :
Ma, Ce ; Kim, Kee-Chan ; McFarlane, Graham ; Athalye, Atul
Author_Institution :
Linde Inc., San Marcos, CA
fYear :
2008
Firstpage :
82
Lastpage :
84
Abstract :
Lanthanum oxide films are deposited using Flex-ALDtrade solution-based precursor formulations via atomic layer deposition. A solid La precursor is dissolved in solvent blends and the solution precursor is delivered via direct liquid injection methods to a vaporizer that is connected to the ALD chamber. The fully vaporized solution precursor is then pulsed into the deposition chamber containing an in- situ quartz crystal microbalance (QCM). High-k bi-layers are formed by growing a La oxide ALD layer onto an HfO2 coated surface of a silicon wafer sample in the same ALD chamber. Composition analysis showed carbon and other contaminants are below 1 atomic %.
Keywords :
atomic layer deposition; high-k dielectric thin films; quartz; Flex-ALD; atomic layer deposition; direct liquid injection; high-k/metal-gate applications; lanthanum oxide films; quartz crystal microbalance; Atomic layer deposition; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Lanthanum; Silicon; Solids; Solvents; Surface contamination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
ISSN :
1078-8743
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
Type :
conf
DOI :
10.1109/ASMC.2008.4529014
Filename :
4529014
Link To Document :
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