Title :
The analysis of NbN and Nb-Si-N films structure nanocomposite
Author :
Ivashchenko, V.I. ; Rogoz, V.M. ; Sobol, O.V. ; Dyadyura, K.O.
Author_Institution :
Inst. for Problems of Mater. Sci., Kiev, Ukraine
Abstract :
NbN and Nb-Si-N films are deposited by magnetron sputtering the Nb and Si targets on silicon wafers at various bias voltage, Us. The films are investigated by an atomic force microscope (AFM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The deposited films are annealed to establish their thermal stability. The NbN films were nanostructured, and the Nb-Si-N films had a nanocomposite structure, and represented an aggregation of δ-NbNx nanocrystallites embedded into the amorphous Si3N4 tissue (nc-δ-NbNx/a-Si3N4).
Keywords :
X-ray diffraction; X-ray photoelectron spectra; aggregation; annealing; atomic force microscopy; nanocomposites; nanofabrication; nanostructured materials; niobium compounds; silicon compounds; sputter deposition; thermal stability; thin films; AFM; NbN; NbSiN; Si; X-ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD; aggregation; annealing; atomic force microscopy; bias voltage; magnetron sputtering; nanocomposite; nanostructured materials; silicon surface; thermal stability; Nanostructures;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959626
