Title :
Integrated high speed silicon PIN photodiode sensor
Author :
Kyomasu, M. ; Nakamura, H. ; Suzuki, T. ; Kato, K. ; Sahara, M.
Author_Institution :
Hamamatsu Photonics, Japan
Abstract :
A silicon PIN photodiode was integrated in bipolar electronic circuits. An extremely high-positivity P/sup --/ epitaxial layer on a P/sup +/ substrate was employed to create a high-speed responsive PIN structure. All of the bipolar transistors and resistances were arranged with the lightly doped P/sup -/ well region. The following growth of an N-type epitaxial layer and the trench isolation process formed the photodiode cathode region and the transistor active area simultaneously. The experimental results on this PIN photodiode with 0.145-mm/sup 2/ sensitive area indicate 680 MHz for the cutoff frequency at 10-V bias with 830-nm radiation and 2.6 ns and 2.5 ns for rise and fall time, respectively. A 50-Mb/s simple optical link with a monolithic receiver was produced based on this technology.<>
Keywords :
bipolar integrated circuits; elemental semiconductors; high-speed optical techniques; integrated optoelectronics; optical communication equipment; optical links; p-i-n diodes; photodiodes; silicon; 680 MHz; 830 nm; PIN photodiode sensor; Si sensor; bipolar electronic circuits; cutoff frequency; elemental semiconductor; high-speed responsive PIN structure; integrated sensor; monolithic receiver; optical link; trench isolation process; Bipolar transistors; Cathodes; Cutoff frequency; Electronic circuits; Epitaxial layers; Optical fiber communication; Optical receivers; PIN photodiodes; Silicon; Substrates;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148864
