• DocumentCode
    1564412
  • Title

    Linewidth Roughness and Cross-sectional Measurements of Sub-50 nm Structures Using CD-SAXS and CD-SEM

  • Author

    Wang, Chengqing ; Choi, Kwang-Woo ; Fu, Wei-En ; Jones, Ronald L. ; Ho, Derek L. ; Soles, Christopher ; Lin, Eric K. ; Wu, Wen-li ; Clarke, James S. ; Villarrubia, John S. ; Bunday, Benjamin

  • Author_Institution
    Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD
  • fYear
    2008
  • Firstpage
    142
  • Lastpage
    147
  • Abstract
    Critical dimension small angle X-ray scattering (CD- SAXS) is a metrology platform that is capable of measuring the average cross section and linewidth roughness (LWR) in test patterns with pitches ranging from 10 to 500 nm with sub-nm precision. These capabilities are obtained by measuring and modeling the scattering intensities of a collimated X-ray beam with sub-nm wavelength from a periodic pattern, such as those found in optical scatterometry targets. In this work, we evaluated the capability of both synchrotron-based and laboratory-scale CD-SAXS for characterizing LWR from measurements of periodic line/space patterns fabricated with extreme ultraviolet (EUV) lithography with sub-50 nm linewidths and designed with programmed roughness amplitude and frequency. For these patterns, CD-SAXS can provide high precision data on cross section dimension, including sidewall angle, line height, linewidth and pitch, as well as the amplitude of LWR. We will also discuss the status of ongoing efforts to compare quantitatively the CD- SAXS data with top-down scanning electron microscopy (CD- SEM) measurements.
  • Keywords
    X-ray scattering; nanolithography; nanopatterning; scanning electron microscopy; surface roughness; surface topography measurement; ultraviolet lithography; CD-SAXS; CD-SEM; critical dimension small angle X-ray scattering; cross-sectional measurement; extreme ultraviolet lithography; linewidth roughness; scanning electron microscopy; wavelength 10 nm to 500 nm; Metrology; Optical collimators; Optical scattering; Radar measurements; Scanning electron microscopy; Spaceborne radar; Testing; Ultraviolet sources; Wavelength measurement; X-ray scattering; Critical Dimension Metrology; Extreme Ultraviolet Lithography; Line Edge Roughness; Scatterometry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
  • Conference_Location
    Cambridge, MA
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-1964-7
  • Electronic_ISBN
    1078-8743
  • Type

    conf

  • DOI
    10.1109/ASMC.2008.4529019
  • Filename
    4529019