DocumentCode :
156455
Title :
Electrophysical properties of InSb quantum nanowires arrays
Author :
Gorokh, G.G. ; Obukhov, I.A. ; Lozovenko, A.A. ; Zakhlebaeva, A.I. ; Sochneva, E.A.
Author_Institution :
BSUIR, Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2014
fDate :
7-13 Sept. 2014
Firstpage :
791
Lastpage :
792
Abstract :
The investigations of the current-voltage characteristics (CVC) of InSb nanowire arrays with diameter of 40 nm and a high aspect ratio of length to diameter (~1000) formed in the matrix of anodic alumina (AA) is given. Presented CVC´s have a nonlinear view on their three parts with varying degrees of nonlinearity. The maximum current value in the nanowire arrays is up to 27 A/cm2 at voltage about 4.6 V.
Keywords :
III-V semiconductors; indium compounds; nanowires; semiconductor quantum wires; InSb; InSb quantum nanowire arrays; anodic alumina matrix; current-voltage characteristics; electrophysical properties; length-diameter aspect ratio; maximum current; nonlinearity degrees; size 40 nm;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
Type :
conf
DOI :
10.1109/CRMICO.2014.6959634
Filename :
6959634
Link To Document :
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