DocumentCode
1564583
Title
Etching Mechanisms of Fluoroelastomer Seals and Performance Characteristics
Author
Alexander, W. Brock ; Foggiato, John
Author_Institution
Greene ,Tweed & Co., Kulpsville, PA
fYear
2008
Firstpage
123
Lastpage
126
Abstract
In this paper, we report on seal performance and degradation mechanisms under a range of plasma processing conditions for several fluoroelastomer materials. Both direct and indirect plasma sources were used and the location of the test samples was varied to impact the chemical versus physical etching mechanisms. Perfluoroelastomer o-rings were exposed to NF3, O2, CF4, or SF6 plasmas. The weight loss after 90 minutes of exposure was measured. Surface roughening of fluoroelastomer seals occurred under different exposure conditions. EDS was employed to analyze particulate residue that formed during the testing and will be discussed in regards to particle generation and contamination. Surfaces were examined with optical microscopy and SEM. Etching mechanisms are discussed.
Keywords
etching; optical microscopy; scanning electron microscopy; sealing materials; surface roughness; SEM; fluoroelastomer seals; indirect plasma sources; optical microscopy; particle contamination; particle generation; particulate residue; physical etching mechanisms; plasma processing conditions; surface roughening; Etching; Plasma applications; Plasma chemistry; Plasma measurements; Plasma sources; Rough surfaces; Seals; Surface contamination; Surface roughness; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
978-1-4244-1964-7
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2008.4529037
Filename
4529037
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