Simulation of nanoscale structures based on carbon materials

Author

Abramov, I.I. ; Kolomejtseva, N.V. ; Romanova, I.A.

Author_Institution

Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2014

fDate

7-13 Sept. 2014

Firstpage

796

Lastpage

797

Abstract

Nanoscale structures based on carbon materials are simulated using the developed numerical models. A functionally integrated structure combining resonant tunneling diode and field-effect transistor based on single carbon nanotube (RTD-FET) is studied. It is found that RTD-FET will have significantly different N-shaped current-voltage characteristics depending on the chirality of the used nanotube. Current-voltage characteristics of a resonant tunneling nanostructure based on graphene are also calculated.

Keywords

carbon nanotube field effect transistors; carbon nanotubes; chirality; graphene; numerical analysis; resonant tunnelling diodes; semiconductor device models; N-shaped current-voltage characteristics; RTD-FET; carbon materials; current-voltage characteristics; field-effect transistor; functionally integrated structure; graphene; nanoscale structure simulation; nanotube chirality; numerical models; resonant tunneling diode; single carbon nanotube; Nanostructured materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-412-5

Type

conf

DOI

10.1109/CRMICO.2014.6959636

Filename

6959636