Title :
Physics of AlGaAs compounds for sensing applications
Author :
Robert, J.L. ; Mosser, V. ; Contreras, S.
Author_Institution :
Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
It is shown that a new type of monolithic pressure sensor for high-pressure operation can be developed using the scientific properties of deep impurity states (so-called DX centers) in III-V semiconducting compounds. Due to the large intrinsic sensitivity of these tapping levels to hydrostatic pressure, all mechanical problems related to the use of a diaphragm at high pressure can be avoided. This approach is also based on the possibilities offered by band gap engineering: the development of very clean and well-controlled epitaxial growth techniques (molecular beam epitaxy, metal-organic chemical vapor deposition) opens new opportunities for measuring device applications. Particular attention is given to GaAlAs solid-state pressure sensors (passive 3-D sensors and active 2-D sensors).<>
Keywords :
III-V semiconductors; aluminium compounds; deep levels; electric sensing devices; energy gap; gallium arsenide; molecular beam epitaxial growth; monolithic integrated circuits; piezoresistance; pressure measurement; pressure transducers; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; AlGaAs; DX centers; III-V semiconducting compounds; active 2-D sensors; band gap engineering; deep impurity states; high-pressure operation; metal-organic chemical vapor deposition; molecular beam epitaxy; monolithic pressure sensor; passive 3-D sensors; piezoresistivity; solid-state pressure sensors; Chemical sensors; Chemical vapor deposition; Epitaxial growth; III-V semiconductor materials; Mechanical sensors; Molecular beam epitaxial growth; Photonic band gap; Physics; Semiconductivity; Semiconductor impurities;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148867
