• DocumentCode
    156467
  • Title

    Single-electron transistor based on porous anodic alumina

  • Author

    Sokol, V.A. ; Yakovtseva, V.A.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2014
  • fDate
    7-13 Sept. 2014
  • Firstpage
    803
  • Lastpage
    804
  • Abstract
    The self-organized nano-sized porous anodic alumina films filled with metal are discussed for multiple-island single-electron transistors operated at room temperature. The proposed approach allows multiple-island single-electron transistors being simultaneously fabricated over the whole wafer area and even on a wafer lot by batch manufacturing like conventional semiconductor integrated circuits.
  • Keywords
    alumina; monolithic integrated circuits; porous semiconductors; single electron transistors; multiple-island single-electron transistors; self-organized nanosized porous anodic alumina films; semiconductor integrated circuits; Heating; Logic gates; Metals; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-412-5
  • Type

    conf

  • DOI
    10.1109/CRMICO.2014.6959639
  • Filename
    6959639