DocumentCode :
1564685
Title :
Characterization of "blinking pixels" in CMOS Image Sensors
Author :
Ackerson, Kristin ; Musante, Charles ; Gambino, Jeffrey ; Ellis-Monaghan, John ; Maynard, Daniel ; Rassel, Richard J. ; Ogg, Kevin ; Jaffe, Mark
Author_Institution :
IBM Microelectron., Essex Junction, VT
fYear :
2008
Firstpage :
255
Lastpage :
258
Abstract :
CMOS image sensors have increasingly replaced the use of charge coupled devices (CCD) in consumer devices because of lower power consumption, lower system cost, and the ability to randomly access data. However, one disadvantage of CMOS image sensors when compared to CCDs is increased noise signal, especially under low illumination conditions. Part of this noise is associated with leakage current or "dark current", the carrier generation that occurs when no illumination is present. Hence, minimizing and characterizing dark current is important for improving the performance of CMOS image sensors.
Keywords :
CMOS image sensors; power consumption; CMOS image sensors; blinking pixels; charge coupled devices; lower system cost; power consumption; CMOS image sensors; Charge coupled devices; Charge-coupled image sensors; Costs; Dark current; Energy consumption; Leakage current; Lighting; Noise generators; Pixel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
ISSN :
1078-8743
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
Type :
conf
DOI :
10.1109/ASMC.2008.4529048
Filename :
4529048
Link To Document :
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