DocumentCode
1564685
Title
Characterization of "blinking pixels" in CMOS Image Sensors
Author
Ackerson, Kristin ; Musante, Charles ; Gambino, Jeffrey ; Ellis-Monaghan, John ; Maynard, Daniel ; Rassel, Richard J. ; Ogg, Kevin ; Jaffe, Mark
Author_Institution
IBM Microelectron., Essex Junction, VT
fYear
2008
Firstpage
255
Lastpage
258
Abstract
CMOS image sensors have increasingly replaced the use of charge coupled devices (CCD) in consumer devices because of lower power consumption, lower system cost, and the ability to randomly access data. However, one disadvantage of CMOS image sensors when compared to CCDs is increased noise signal, especially under low illumination conditions. Part of this noise is associated with leakage current or "dark current", the carrier generation that occurs when no illumination is present. Hence, minimizing and characterizing dark current is important for improving the performance of CMOS image sensors.
Keywords
CMOS image sensors; power consumption; CMOS image sensors; blinking pixels; charge coupled devices; lower system cost; power consumption; CMOS image sensors; Charge coupled devices; Charge-coupled image sensors; Costs; Dark current; Energy consumption; Leakage current; Lighting; Noise generators; Pixel;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
978-1-4244-1964-7
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2008.4529048
Filename
4529048
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