Title :
Simulation of the influence of impact ionization process on the current noise in deep submicron silicon diode
Author :
Borzdov, A.V. ; Borzdov, V.M. ; Busliuk, V.V.
Author_Institution :
Belarusian State Univ., Minsk, Belarus
Abstract :
Ensemble Monte Carlo simulation has been used to simulate charge carrier transport in the deep submicron silicon diode with n+-n-n+ structure. The influence of impact ionization process on static current-voltage characteristics as well as current noise has been studied.
Keywords :
Monte Carlo methods; impact ionisation; semiconductor device models; semiconductor diodes; silicon; Monte Carlo simulation; charge carrier transport; current noise; deep submicron silicon diode; impact ionization process; static current-voltage characteristic; Educational institutions;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959640
