Mis-structures with nanoscale dielectric films of the rare-earth metal-alloyed silicon nitride

One of the main problems of electronics of MIS-devices - increasing stability of their features is considered. This problem solution is achieved by the surface-state density reduction using the rare-earth metal-alloyed silicon nitride films as a tunnel and barrier layer, and nanoclusters of SiGe solid solution and Ge as a storage medium. A CV-study is made of electrophysical parameters of MIS-structures of Me-Si₃N₄ (rare-earth metals) - nanoclusters of Ge(SiGe)-Si₃N₄ (rare-earth metals) -nSi, in which the rare-earth elements with different atomic radius are used as alloying components. The regularity of influence of the rare-earth metal radius values on electrophysical characteristics of MIS-structures is established.