• DocumentCode
    1564702
  • Title

    90nm Games Processor Wafer to Module Power Yield Optimization

  • Author

    Mallette, Raymond ; Rawlins, Brad

  • Author_Institution
    IBM Microelectron., Essex Junction, VT
  • fYear
    2008
  • Firstpage
    264
  • Lastpage
    267
  • Abstract
    When fabricating a high volume games processor (CPU) for the consumer market, due to the cost of the module package, it is important to optimize the functional yield loss between the wafer die and the finished module package. For a performance CPU in a mature 90 nm technology the primary yield drivers can be power and performance. A functional power Iddq screen test method is presented here that decreases yield loss across functional test sectors by minimizing the impact of process variation for device gate leakage.
  • Keywords
    microprocessor chips; wafer level packaging; device gate leakage; functional power screen test; functional yield loss; games processor wafer; module package; module power yield optimization; size 90 nm; wafer die; CMOS process; CMOS technology; Cost function; Current measurement; Gate leakage; Microelectronics; Packaging; Performance loss; Power measurement; Semiconductor device testing; CMOS Device Gate Leakage; CMOS Device Process Variability; Iddq Screening; Wafer to Module Test Yield Optimization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
  • Conference_Location
    Cambridge, MA
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-1964-7
  • Electronic_ISBN
    1078-8743
  • Type

    conf

  • DOI
    10.1109/ASMC.2008.4529050
  • Filename
    4529050