DocumentCode
1564702
Title
90nm Games Processor Wafer to Module Power Yield Optimization
Author
Mallette, Raymond ; Rawlins, Brad
Author_Institution
IBM Microelectron., Essex Junction, VT
fYear
2008
Firstpage
264
Lastpage
267
Abstract
When fabricating a high volume games processor (CPU) for the consumer market, due to the cost of the module package, it is important to optimize the functional yield loss between the wafer die and the finished module package. For a performance CPU in a mature 90 nm technology the primary yield drivers can be power and performance. A functional power Iddq screen test method is presented here that decreases yield loss across functional test sectors by minimizing the impact of process variation for device gate leakage.
Keywords
microprocessor chips; wafer level packaging; device gate leakage; functional power screen test; functional yield loss; games processor wafer; module package; module power yield optimization; size 90 nm; wafer die; CMOS process; CMOS technology; Cost function; Current measurement; Gate leakage; Microelectronics; Packaging; Performance loss; Power measurement; Semiconductor device testing; CMOS Device Gate Leakage; CMOS Device Process Variability; Iddq Screening; Wafer to Module Test Yield Optimization;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
978-1-4244-1964-7
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2008.4529050
Filename
4529050
Link To Document