Title :
Study of the excitation mode of plasma waves in 2D plasma of GaAs-AlxGa1???xAs heterostructure at low temperatures
Author :
Murav´ev, V.V. ; Tamelo, A.A. ; Mishenko, V.N. ; Molodkin, D.F.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
On the basis of the statistical simulation method the study of exaltation mode of plasma waves in 2D plasma of heterostructures and the main characteristics of physical process of charge carriers transfer, was carried out at low temperatures. Algorithms and programs for the study of excitation mode of plasma waves in 2D plasma heterostructures. Plasma frequency in GaAs / AlxGa1-xAs heterostructure was calculated, its value is about 3.58 THz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; plasma waves; statistical analysis; terahertz waves; 2D plasma heterostructures; GaAs-AlxGa1-xAs; charge carriers transfer; plasma frequency; plasma wave excitation mode; statistical simulation method;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959642
