DocumentCode
156479
Title
The resonant-emission diode on a nitride gallium cathode with single-layer cathode coating
Author
Goncharuk, N.M. ; Karushkin, N.F.
Author_Institution
Res. Inst. “Orion”, Kiev, Ukraine
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
817
Lastpage
818
Abstract
A presence of resonant electron emission of GaN micro-cathode with AlGaN single-layer coating at certain parameters of the coating and electric field have been shown and negative conductance of a diode based on the emission is obtained. Dependence of frequency spectrum of negative conductance on cathode coating parameters is investigated. Parameters of the diode with negative conductance in terahertz frequency range has been found and optimized.
Keywords
III-V semiconductors; aluminium compounds; cathodes; coatings; diodes; electron field emission; gallium compounds; wide band gap semiconductors; GaN-AlGaN; electric field; frequency spectrum; microcathode; negative conductance; nitride gallium cathode; resonant electron emission diode; single-layer cathode coating; single-layer coating; terahertz frequency; Gallium nitride;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959646
Filename
6959646
Link To Document